FW231A no. a0515-1/4 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan sanyo semiconductors data sheet o0406pa ms im tc-00000221 any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. FW231A n-channel silicon mosfet general-purpose switching device applications features ? 2.5v drive. ? composite type, facilitating high-density mounting. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 20 v gate-to-source voltage v gss 10 v drain current (dc) i d 8a drain current (pw 10s) i d duty cycle 1% 9 a drain current (pw 10 m s) i dp duty cycle 1% 52 a allowable power dissipation p d mounted on a ceramic board (1500mm 2 5 0.8mm) 1unit, pw 10s 2.3 w total dissipation p t mounted on a ceramic board (1500mm 2 5 0.8mm) 1unit, pw 10s 2.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0v 1 m a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.5 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =8a 9 15 s r ds (on)1 i d =8a, v gs =4.5v 10 17 23 m w static drain-to-source on-state resistance r ds (on)2 i d =8a, v gs =4v 11 18 24 m w r ds (on)3 i d =4a, v gs =2.5v 12 20 33 m w input capacitance ciss v ds =10v, f=1mhz 1530 pf output capacitance coss v ds =10v, f=1mhz 230 pf reverse transfer capacitance crss v ds =10v, f=1mhz 215 pf turn-on delay time t d (on) see specified test circuit. 19 ns rise time t r see specified test circuit. 225 ns turn-off delay time t d (off) see specified test circuit. 125 ns fall time t f see specified test circuit. 125 ns marking :w231a continued on next page. ordering number : ena0515
FW231A no. a0515-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit total gate charge qg v ds =10v, v gs =4.5v, i d =8a 21 nc gate-to-source charge qgs v ds =10v, v gs =4.5v, i d =8a 3.4 nc gate-to-drain miller charge qgd v ds =10v, v gs =4.5v, i d =8a 4.8 nc diode forward voltage v sd i s =8a, v gs =0v 0.8 1.2 v package dimensions electrical connection unit : mm (typ) 7005-003 switching time test circuit pw=10 m s d.c. 1% p. g 50 w g s d i d =5a r l =2 w v dd =10v v out FW231A v in 4.5v 0v v in 14 5 8 5.0 4.4 6.0 0.3 1.5 1.8 max 0.1 0.595 1.27 0.2 0.43 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : sop8 8765 1234 top view 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a i d -- v ds i d -- v gs 0 0.05 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 0 1 2 3 6 5 4 8 7 0.4 0.3 0.35 0.15 0.2 0.25 it05892 0 0.2 0.4 0.8 0.6 1.0 1.2 1.4 1.6 1.8 it05893 v gs =1.5v 2.0v 2.5v 3.0v 4.5v ta=75 c --25 c v ds =10v 25 c 4.0v
FW231A no. a0515-3/4 drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v source current, i s -- a ? y fs ? -- i d i s -- v sd static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w gate-to-source voltage, v gs -- v ambient temperature, ta -- c r ds (on) -- v gs r ds (on) -- ta 02468 20 25 30 35 40 45 50 0 5 10 15 10 12 it11498 it11499 --75 --50 --25 0 25 50 75 100 125 150 175 0 5 10 30 25 20 15 50 45 40 35 ta=25 c 8a i d =4a i d =8a, v gs =4.0v i d =4a, v gs =2.5v 0.01 0.1 1.0 10 3 5 7 2 5 3 2 7 3 5 7 2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 it05897 it05896 0.01 0.1 1.0 10 23 57 23 7 52357 0.1 1.0 10 5 2 3 7 2 3 5 7 2 ta= --25 c 75 c 25 c v ds =10v ta=75 c 25 c --25 c v gs =0v drain-to-source voltage, v ds -- v drain current, i d -- a v gs -- qg a s o total gate charge, qg -- nc gate-to-source voltage, v gs -- v 24 0681014 12 16 18 20 100 1000 7 2 3 5 7 5 3 2 it05899 10 100 1000 0.1 1.0 23 57 57 23 2 3 5 7 2 3 5 7 it05898 coss crss ciss f=1mhz t d (on) t r t d (off) t f v dd =10v v gs =4.5v 1.0 10 100 0.01 0.1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 it11501 0.01 23 57 1.0 10 0.1 23 57 23 57 23 i d =8a operation in this area is limited by r ds (on). 10ms 100ms 1ms i dp =52a 10 m s dc operation (ta=25 c) 10s drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a switching time, sw time -- ns sw time -- i d ciss, coss, crss -- v ds ta=25 c single pulse mounted on a ceramic board (1500mm 2 5 0.8mm) 1unit 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 15 20 510 4.5 it11500 v ds =10v i d =8a
FW231A no. a0515-4/4 ps note on usage : since the FW231A is a mosfet product, please avoid using this device in the vicinity of highly charged objects. 0 20 40 60 80 100 120 140 160 0 0.5 1.0 3.0 2.5 1.5 2.0 2.3 it11502 it11503 p d -- ta 1unit p d (fet1) -- p d (fet2) total dissipation mounted on a ceramic board (1500mm 2 5 0.8mm), pw 10s ambient temperature, ta -- c allowable power dissipation, p d -- w allowable power dissipation (fet1), p d -- w allowable power dissipation (fet2), p d -- w 0 0.5 1.0 1.5 2.0 2.3 2.5 0 0.5 2.5 2.0 1.0 1.5 2.3 mounted on a ceramic board (1500mm 2 5 0.8mm), pw 10s specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of october, 2006. specifications and information herein are subject to change without notice.
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